Simply printing high-performance perovskite-based transistors
The POSTECH research group collaborated with Professor Yong-Young Noh and Ph.D. student's Ao Liu and Huihui Zhu which are the Department of Chemical Engineering, in working with Professor Myung-Gil Kim which are school of Advanced Materials Science and Engineering of Sungkyunkwan University, has developed the performance of a p-type semiconductor transistor using inorganic metal halide perovskite. One of the largest benefits of the new method is that it capables solution processed perovskite transistors to be easily printed as semiconductor-like circuits.
Perovskite depending transistors maintain the current by joining p-type semiconductors which occurs hole movable with n-type semiconductors. Compared to n-type semiconductors that have been actively analyzed so far, fabricating high-performance p-type semiconductors has been a challenge. Several Scientists have practice to develop perovskite in the p-type semiconductor for its good electrical conductivity, but its poor electrical performance and reproducibility have harder businesses.
To control this problem, the Scientists used the altered inorganic metal halidecaesium tin triiodide (CsSnI3) to improve the p-type perovskite semiconductor and produced the big-performance transistor dependent on this. This transistor occurs maximun hole movements of 50cm2V-1s-1 and larger and the current ratio of more than 108, and noted the biggest performance among the perovskite semiconductor transistors that have been improved so far.
Creating the material into a solution, the Scientists achieve in easily printing the p-type semiconductor transistor as if printing a document. This process is not only suitable but also cost-efficient, that can occur to the commercialization of perovskite equipment in the next period of future.
Professor Yong-Young Noh on the importance of the research said that -The recent improved semiconductor material and transistor can be generally beneficial as logic circuits in maximun-end exhibits and in wearable electronic devices, and it also helpful in stacked electronic circuits and optoelectronic equipment by stacking them vertically with silicon semiconductors.
The research was organized with the help from the Mid-Career Scientists Program, Creative Materials Discovery Program, Next-generation Intelligence-Type Semiconductor Development Program, and also the Basic Science Laboratory Program of the National Study Foundation of Korea, and from Samsung Show Corporation.